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Optimization of Controlling Parameters of Porous Silicon Synthesis Using Taguchi Design of Experiment

  • PHYSICAL CHEMISTRY OF DISPERSED SYSTEMS AND SURFACE PHENOMENA
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Abstract

Porous silicon (PS) with high porosity is used in energy storage, solar photovoltaics, and sensing applications. The anodization method is the most widely used fabrication method since it is easy and economical. However, the method has various interdependent controlling parameters to fabricate PS, such as wafer resistivity, current density, hydrofluoric acid concentration, and anodization time. The parameters need to be optimized for a particular application to achieve the optimum porosity with fewer accouterments and time. The optimization can be carried out using the Taguchi design of experiment, which is based on the fractional factorial orthogonal array (OA). Mean output parameter graph, Signal to noise ratio, and interaction plot help to decide the interdependency and the optimized parameter for the desired output. The optimization achieved is validated by the factorial design of experiments.

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ACKNOWLEDGMENTS

The research is part of a project funded by DST-IIT Bombay Energy Storage Platform on Hydrogen (DST/TMD/MECSP/2K17/14 (G), 14-Feb-2019). The authors thankfully acknowledge the financial support extended by DST, Govt. of India.

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Authors and Affiliations

  1. Department of Electrical Engineering, NIT Rourkela, 769008, Odisha, India

    Shivam Maurya, Sakti Prasanna Muduli & Paresh Kale

  2. Department of BioNest, Punjab University, 160014, Punjab, India

    Suman Nayak

  3. DST-IIT Bombay Energy Storage Platform on Hydrogen, IIT Bombay, 410076, Maharashtra, India

    Paresh Kale

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  1. Shivam Maurya
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  2. Sakti Prasanna Muduli
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  3. Suman Nayak
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  4. Paresh Kale
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Correspondence to Shivam Maurya, Sakti Prasanna Muduli, Suman Nayak or Paresh Kale.

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Maurya, S., Muduli, S.P., Nayak, S. et al. Optimization of Controlling Parameters of Porous Silicon Synthesis Using Taguchi Design of Experiment. Russ. J. Phys. Chem. 97, 749–755 (2023). https://doi.org/10.1134/S0036024423040295

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  • DOI: https://doi.org/10.1134/S0036024423040295

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