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Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots

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Abstract

The existence of the antibonding ground state of holes in artificial molecules, which are formed by the vertically coupled Ge/Si quantum dots, has been proved experimentally. This phenomenon is absent in natural molecules and double quantum dots containing electrons. It is a consequence of spin-orbit interaction and deformation effects in the valence band of vertically aligned quantum dots.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    A. I. Yakimov, V. A. Timofeev, A. I. Nikiforov & A. V. Dvurechenskii

Authors
  1. A. I. Yakimov
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  2. V. A. Timofeev
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  3. A. I. Nikiforov
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  4. A. V. Dvurechenskii
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Correspondence to A. I. Yakimov.

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Original Russian Text © A.I. Yakimov, V.A. Timofeev, A.I. Nikiforov, A.V. Dvurechenskii, 2011, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2011, Vol. 94, No. 10, pp. 806–810.

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Yakimov, A.I., Timofeev, V.A., Nikiforov, A.I. et al. Antibonding ground state of holes in double vertically coupled Ge/Si quantum dots. Jetp Lett. 94, 744–747 (2012). https://doi.org/10.1134/S0021364011220127

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  • DOI: https://doi.org/10.1134/S0021364011220127

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