Abstract
The thermodynamics and kinetics of the thermomigration of molten zones based on Al–Ga and Al–Ga melts in the preparation of silicon epilayers have been studied in detail. We have determined the threshold thermomigration temperature for zones of various compositions. The migration onset temperature has been shown to increase monotonically with increasing Ga or Sn concentration in the liquid phase. The thermomigration rate of Si–Al–Ga zones decreases with increasing gallium concentration at temperatures below 1473 K and increases at higher temperatures. The thermomigration rate of Si–Al–Sn zones decreases with increasing Sn concentration over the entire temperature range studied. No chemical compounds have been detected in the Si–Al–Ga or Si–Al–Sn system, which simplifies the use of the thermomigration method in these systems.
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Original Russian Text © V.V. Kuznetsov, V.N. Lozovskii, V.P. Popov, E.R. Rubtsov, B.M. Seredin, 2018, published in Neorganicheskie Materialy, 2018, Vol. 54, No. 1, pp. 35–39.
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Kuznetsov, V.V., Lozovskii, V.N., Popov, V.P. et al. Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems. Inorg Mater 54, 32–36 (2018). https://doi.org/10.1134/S0020168518010065
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DOI: https://doi.org/10.1134/S0020168518010065