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Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions

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Abstract

Using the molecular dynamics method, the sputtering of a copper target and the subsequent formation of a copper nanofilm on a silicon substrate has been modeled. The process parameters corresponded to the conditions in low-pressure gas-discharge plasma. The obtained values of the sputtering coefficient are consistent with experimental data. The nanofilm growth rate has been determined.

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Funding

This work was supported by the Russian Science Foundation, project no. 19-71-10055.

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Authors and Affiliations

  1. Kazan (Volga Region) Federal University, 420008, Kazan, Russia

    I. I. Fairushin & A. Yu. Shemakhin

  2. Joint Institute for High Temperatures, 125412, Moscow, Russia

    I. I. Fairushin

  3. Tupolev National Research Technical University of Kazan—KAI, 420111, Kazan, Russia

    I. I. Fairushin

  4. Higher School of Economics (National Research University), 119048, Moscow, Russia

    A. A. Khabir’yanova

Authors
  1. I. I. Fairushin
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  2. A. Yu. Shemakhin
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  3. A. A. Khabir’yanova
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Correspondence to I. I. Fairushin.

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Translated by S. Zatonsky

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Fairushin, I.I., Shemakhin, A.Y. & Khabir’yanova, A.A. Molecular Dynamics Simulation of Copper Nanofilm Self-Assembly on Silicon Substrate under Gas-Discharge Plasma Conditions. High Energy Chem 55, 399–401 (2021). https://doi.org/10.1134/S0018143921050039

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  • DOI: https://doi.org/10.1134/S0018143921050039

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