Skip to main content
SpringerLink
Log in

EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

  • Condensed Matter
  • Published:
Journal of Experimental and Theoretical Physics Letters Aims and scope Submit manuscript

Abstract

It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V Si-V C)0, which have the triplet ground state. The energy level scheme and the mechanism of creating the photoinduced population inversion of the triplet sublevels of the divacancy ground state are determined. It is concluded that there is a singlet excited state through which spin polarization is accomplished, and this fact opens the possibility of detecting magnetic resonance on single divacancies.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V. S. Vainer and V. A. Il’in, Sov. Phys. Solid State 23, 2126 (1981).

    Google Scholar 

  2. W. E. Carlos, E. R. Glaser, and D. V. Shanabrook, Physica B (Amsterdam) 340–342, 151 (2003).

    Google Scholar 

  3. Th. Lingner et al., Phys. Rev. B 64, 245 212 (2001).

  4. J. H. N. Loubser and J. A. van Wyk, Rep. Prog. Phys. 41, 1201 (1978).

    Article  ADS  Google Scholar 

  5. E. Sörman, N. T. Son, W. M. Chen, et al., Phys. Rev. B 61, 2613 (2000).

    Article  ADS  Google Scholar 

  6. D. A. Redman, S. Brown, R. H. Sands, and S. R. Rand, Phys. Rev. Lett. 67, 3420 (1991).

    Article  ADS  Google Scholar 

  7. S. B. Orlinski, J. Schmidt, E. N. Mokhov, and P. G. Baranov, Phys. Rev. B 67, 125207 (2003).

    Google Scholar 

  8. Mt. Wagner, N. Q. Thinh, N. T. Son, et al., Phys. Rev. B 66, 155214 (2002).

  9. A. Gruber, A. Drabenstedt, C. Tietz, et al., Science 276, 2012 (1997); A. P. Nizovtsev, S. Ya. Kilin, F. Jelezko, et al., Physica B (Amsterdam) 340–342, 106 (2003).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    P. G. Baranov, I. V. Il’in, E. N. Mokhov & M. V. Muzafarova

  2. Huygens Laboratory, Department of Physics, Leiden University, Leiden, The Netherlands

    S. B. Orlinskii & J. Schmidt

Authors
  1. P. G. Baranov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. I. V. Il’in
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. E. N. Mokhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. V. Muzafarova
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. S. B. Orlinskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. J. Schmidt
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Éksperimental’no\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) i Teoretichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 82, No. 7, 2005, pp. 494–497.

Original Russian Text Copyright © 2005 by Baranov, Il’in, Mokhov, Muzafarova, Orlinskii, Schmidt.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Baranov, P.G., Il’in, I.V., Mokhov, E.N. et al. EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide. Jetp Lett. 82, 441–443 (2005). https://doi.org/10.1134/1.2142873

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.2142873

PACS numbers

Search

Navigation