Abstract
The temperature dependences of photovoltage induced by intense pulses of red and white light, along with the time-resolved spectral dependences of photoluminescence, are studied for porous silicon structures por-Si/p-Si). These structures have been obtained by anode etching of p-Si with subsequent Au doping from an aqueous solution with Au ion concentrations of 10−4 and 10−3 M. The current-voltage characteristics and electroluminescence of the resulting por-Si/p-Si and por-Si:Au/p-Si structures are also studied after a deposition of semitransparent Au electrodes on por-Si. It is shown that the Au doping changes the sign of the boundary potential of p-Si from positive to negative, alters the magnitude and sign of the photovoltage in the por-Si films, and eliminates photomemory phenomena, which are associated with the capture of nonequilibrium electrons at grain-boundary traps and por-Si traps. The formation of Au nanocrystals in por-Si substantially affects the current-voltage and photoluminescence characteristics. Electroluminescence is observed for the Au/por-Si:(Au, 10−3 M)/p-Si/Al structures and is attributed to emission from the nanocrystals.
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References
A. G. Gullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Status Solidi B 215, 871 (1999).
V. E. Primachenko and O. V. Snitko, Physics of Semiconductor Surfaces Doped with Metals (Naukova Dumka, Kiev, 1988) [in Russian].
I. Coulthard, R. Sammyniaken, S. J. Naftel, et al., Phys. Status Solidi A 182, 157 (2000).
R. D. Fedorovich, A. G. Naumovets, and P. M. Tomchuk, Phys. Rep. 328(2–3), 74 (2000).
É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, et al., Optoélektron. Poluprovodn. Tekh., No. 37, 136 (2002).
E. F. Venger, S. I. Kirillova, I. M. Kizyak, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 117 (2004) [Semiconductors 38, 113 (2004)].
E. F. Venger, T. Ya. Gorbach, S. I. Kirillova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 349 (2002) [Semiconductors 36, 330 (2002)].
E. F. Venger, É. B. Kaganovich, S. I. Kirillova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1330 (1999) [Semiconductors 33, 1202 (1999)].
É. B. Kaganovich, É. G. Manoilov, and S. V. Svechnikov, Ukr. Fiz. Zh. 46, 1196 (2001).
L. Burstein, Y. Shapira, J. Partee, et al., Phys. Rev. B 55, R1930 (1997).
Z. S. Gribnikov and V. I. Mel’nikov, Fiz. Tekh. Poluprovodn. (Leningrad) 2, 1352 (1968) [Sov. Phys. Semicond. 2, 1133 (1968)].
S. I. Kirillova, V. E. Primachenko, E. E. Venger, and V. A. Chernobai, Semicond. Phys. Quantum Electron. Optoelectron. 4, 12 (2001).
W. Long, P. Steiner, and F. Kozlowski, J. Lumin. 57, 341 (1993).
N. Labic and J. Linnros, J. Appl. Phys. 80, 5971 (1996).
S. K. Lazaruk, P. V. Zhagiro, A. A. Leshok, and V. E. Borisenko, Izv. Akad. Nauk, Ser. Fiz. 66, 179 (2002).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 5, 2005, pp. 595–601.
Original Russian Text Copyright © 2005 by Primachenko, Kononets, Bulakh, Venger, Kaganovich, Kizyak, Kirillova, Mano\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)lov, Tsyrkunov.
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Primachenko, V.E., Kononets, J.F., Bulakh, B.M. et al. The electronic and emissive properties of Au-doped porous silicon. Semiconductors 39, 565–571 (2005). https://doi.org/10.1134/1.1923566
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DOI: https://doi.org/10.1134/1.1923566