Abstract
Results of complex experiments aimed at finding a relationship between the properties of initial GaAs single-crystal wafers and epitaxial films and the threshold spectrometric characteristics of ionizing radiation detectors are reported.
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Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 74, No. 3, 2004, pp. 28–36.
Original Russian Text Copyright © 2004 by Bespalov, Vorontsov, Gorbatsevich, Egorkin, Zhigal’ski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Il’ichev, Kulakov, Nalbandov, Pantuev, Rasputny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Sveshnikov, Shmelev.
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Bespalov, V.A., Vorontsov, A.V., Gorbatsevich, A.A. et al. Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors. Tech. Phys. 49, 310–317 (2004). https://doi.org/10.1134/1.1688416
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DOI: https://doi.org/10.1134/1.1688416