Abstract
Lasing at 1488–1515 nm in the temperature range 20–83°C was obtained in structures with an active region based on multiply stacked arrays of self-organized quantum dots grown on GaAs substrates. The threshold current density of a laser with four cleaved facets was 800 A/cm2 at room temperature. The method of wavelength extension is based on the use of a metamorphic buffer layer with an In content of about 20% intended for relieving the lattice mismatch stress.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 12, 2003, pp. 1461–1464.
Original Russian Text Copyright © 2003 by Zhukov, Vasil’yev, Kovsh, Mikhrin, Semenova, Egorov, Odnoblyudov, Maleev, Nikitina, Kryjanovskaya, Gladyshev, Shernyakov, Maximov, Ledentsov, Ustinov, Alferov.
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Zhukov, A.E., Vasil’yev, A.P., Kovsh, A.R. et al. Lasing at 1.5 µm in quantum dot structures on GaAs substrates. Semiconductors 37, 1411–1413 (2003). https://doi.org/10.1134/1.1634663
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DOI: https://doi.org/10.1134/1.1634663