Abstract
The hysteresis loops of reflectivity and capacitance of amorphous and polycrystalline vanadium dioxide films in the range of a semiconductor-metal phase transition were studied. The morphology of these films was studied by an atomic-force microscope. It is established that the small number (2–3) of temperature cycles suppress the phase transition due to possible diffusion of oxygen from VO2 clusters into adjacent clusters consisting of the lowest oxides of the Magnelli series. It is shown that the annealing of an amorphous film of vanadium dioxide in oxygen leads to an additional oxidation of low oxides and the formation of VO2, the formation of a polycrystalline film, and the recovery of the phase transition. The above results and the data obtained by atomic-force microscopy are indicative of the high optical quality of the polycrystalline vanadium dioxide films produced by the annealing of amorphous VO2 films. The results also show that these films can be used in interferometers and optical limiters.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 4, 2003, pp. 388–392.
Original Russian Text Copyright © 2003 by Klimov, Timofeeva, Khanin, Shadrin, Il’inski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Silva-Andrade.
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Klimov, V.A., Timofeeva, I.O., Khanin, S.D. et al. Effect of crystallization of amorphous vanadium dioxide films on the parameters of a semiconductor-metal phase transition. Semiconductors 37, 370–374 (2003). https://doi.org/10.1134/1.1568452
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DOI: https://doi.org/10.1134/1.1568452