Abstract
Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of removal of mobile charge carriers—the standard parameter in determining the radiation hardness of a material—depends on temperature. The use of data obtained only at room temperature may lead to an incorrect assessment of the radiation hardness of WGS. A conclusion is made that the WGS properties combine, on the one hand, high radiation hardness of high-temperature devices based on these semiconductors and, on the other, the possibility of effective radiation-induced doping (e.g., for obtaining semi-insulating local regions in a material at room temperature).
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 11, 2002, pp. 1354–1359.
Original Russian Text Copyright © 2002 by Lebedev, Kozlovski, Strokan, Davydov, Ivanov, Strel’chuk, Yakimova.
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Lebedev, A.A., Kozlovski, V.V., Strokan, N.B. et al. Radiation hardness of wide-gap semiconductors (using the example of silicon carbide). Semiconductors 36, 1270–1275 (2002). https://doi.org/10.1134/1.1521229
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DOI: https://doi.org/10.1134/1.1521229