Skip to main content
Log in

Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

  • Electronic and Optical Properties of Semiconductors
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of removal of mobile charge carriers—the standard parameter in determining the radiation hardness of a material—depends on temperature. The use of data obtained only at room temperature may lead to an incorrect assessment of the radiation hardness of WGS. A conclusion is made that the WGS properties combine, on the one hand, high radiation hardness of high-temperature devices based on these semiconductors and, on the other, the possibility of effective radiation-induced doping (e.g., for obtaining semi-insulating local regions in a material at room temperature).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Physical Processes in Irradiated Semiconductors, Ed. by L. S. Smirnov (Nauka, Novosibirsk, 1972).

    Google Scholar 

  2. J. W. Corbett and J. C. Bourgein, in Point Defect in Solids (Plenum, New York, 1975), Vol. 2, p. 1.

    Google Scholar 

  3. B. G. Svensson, A. Hallen, M. K. Linnarsson, et al., Mater. Sci. Forum 353–356, 549 (2001).

    Google Scholar 

  4. A. Hallen, A. Henry, P. Pellegrino, et al., Mater. Sci. Eng. 61–62, 378 (1999).

    Google Scholar 

  5. R. K. Nadella and M. A. Capano, Appl. Phys. Lett. 70, 886 (1997).

    Article  ADS  Google Scholar 

  6. G. C. Rybicki, J. Appl. Phys. 78, 2996 (1995).

    Article  ADS  Google Scholar 

  7. V. Nagesh, J. W. Farmer, R. F. Davis, and H. S. Kong, Appl. Phys. Lett. 50, 1138 (1987).

    Article  ADS  Google Scholar 

  8. J. McGarrity, F. McLean, M. Dealancey, et al., IEEE Trans. Nucl. Sci. 39, 1974 (1992).

    Article  ADS  Google Scholar 

  9. H. Itoh, M. Yashikawa, I. Nashiyama, et al., Springer Proc. Phys. 56, 143 (1992).

    Google Scholar 

  10. A. A. Lebedev, A. I. Veinger, D. V. Davydov, et al., J. Appl. Phys. 88, 6265 (2000).

    Article  ADS  Google Scholar 

  11. V. S. Vavilov, N. U. Isaev, B. N. Mukashev, and A. V. Spitsyn, Fiz. Tekh. Poluprovodn. (Leningrad) 6, 1041 (1972) [Sov. Phys. Semicond. 6, 907 (1972)].

    Google Scholar 

  12. Yu. V. Bulgakov and T. I. Kolomenskaya, Fiz. Tekh. Poluprovodn. (Leningrad) 1, 422 (1967) [Sov. Phys. Semicond. 1, 346 (1967)].

    Google Scholar 

  13. V. V. Makarov, Fiz. Tverd. Tela (Leningrad) 13, 2357 (1971) [Sov. Phys. Solid State 13, 1974 (1972)].

    Google Scholar 

  14. V. L. Vinetskii and L. S. Smirnov, Fiz. Tekh. Poluprovodn. (Leningrad) 5, 176 (1971) [Sov. Phys. Semicond. 5, 153 (1971)].

    Google Scholar 

  15. D. V. Davydov, A. A. Lebedev, A. S. Tregubova, et al., Mater. Sci. Forum 338–342, 221 (2000).

    Google Scholar 

  16. Compensated Silicon, Ed. by B. I. Boltaks (Nauka, Leningrad, 1972).

    Google Scholar 

  17. W. J. Choyke, Inst. Phys. Conf. Ser. 31, 58 (1977).

    Google Scholar 

  18. F. H. Ruddy, A. R. Dullo, J. G. Seidel, et al., IEEE Trans. Nucl. Sci. 45, 536 (1998).

    Article  Google Scholar 

  19. A. A. Lebedev, N. S. Savkina, A. M. Ivanov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 249 (2000) [Semiconductors 34, 243 (2000)].

    Google Scholar 

  20. H. Itoh and N. Haykawa, J. Appl. Phys. 66, 4529 (1989).

    ADS  Google Scholar 

  21. V. V. Kozlovski, L. F. Zakharenkov, T. I. Kolchenko, and V. M. Lomako, Radiat. Eff. Defects Solids 138, 63 (1996).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 11, 2002, pp. 1354–1359.

Original Russian Text Copyright © 2002 by Lebedev, Kozlovski, Strokan, Davydov, Ivanov, Strel’chuk, Yakimova.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lebedev, A.A., Kozlovski, V.V., Strokan, N.B. et al. Radiation hardness of wide-gap semiconductors (using the example of silicon carbide). Semiconductors 36, 1270–1275 (2002). https://doi.org/10.1134/1.1521229

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1521229

Keywords

Navigation