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Deep levels of nitrogen vacancy complexes in graphite-like boron nitride

  • Defects, Dislocations, and Physics of Strength
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Abstract

This paper presents the results of a theoretical study of deep nitrogen vacancy levels and of small clusters of nitrogen di-and trivacancies, including the nearest neighbor defects in one layer of graphite-like boron nitride, made using the model-pseudopotential and supercell methods. The calculated spectra and oscillator strengths were used to interpret the local bands of optical absorption, luminescence, and photoconductivity in pyrolytic boron nitride before and after irradiation by fast neutrons, protons, and carbon ions (50–150 keV). The shallow activation levels of thermally stimulated luminescence and conductivity existing before and arising after irradiation were identified.

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References

  1. G. V. Samsonov, Nitrides (Naukova Dumka, Kiev, 1969).

    Google Scholar 

  2. EMIS Datareviews Series, No. 11: Properties of Group III Nitrides, Ed. by J. H. Edgar (Kansas State University, 1994).

  3. J. Neugebauer and C. G. van de Walle, Phys. Rev. B 50(11), 8067 (1994).

    Article  ADS  Google Scholar 

  4. P. Boguslawski, E. L. Briggs, and J. Bernholc, Phys. Rev. B 51(23), 17255 (1995).

    Google Scholar 

  5. C. Stampfl, C. G. van de Walle, D. Vogel, et al., Phys. Rev. B 61(12), 7846 (2000).

    Article  ADS  Google Scholar 

  6. A. M. Dobrotvorskij and R. A. Evarestov, Phys. Status Solidi B 66(1), 83 (1974).

    Google Scholar 

  7. R. A. Évarestov, E. A. Kotomin, and A. N. Ermoshkin, Models of Point Defects in Solids (Zinatne, Riga, 1983).

    Google Scholar 

  8. A. Katzir, J. T. Suss, A. Zunger, and A. Halperin, Phys. Rev. B 11(6), 2370 (1975).

    Article  ADS  Google Scholar 

  9. A. Zunger and A. Katzir, Phys. Rev. B 11(6), 2378 (1975).

    Article  ADS  Google Scholar 

  10. V. A. Gubanov, Z. V. Lu, B. M. Klein, and C. Y. Fong, Phys. Rev. B 53(8), 4377 (1996).

    Article  ADS  Google Scholar 

  11. D. W. Jenkins and J. D. Dow, Phys. Rev. B 39, 3317 (1989).

    ADS  Google Scholar 

  12. D. W. Jenkins, J. D. Dow, and M. H. Tsai, J. Appl. Phys. 72, 4130 (1992).

    ADS  Google Scholar 

  13. W. Potz and D. K. Ferry, Phys. Rev. B 31, 968 (1985).

    ADS  Google Scholar 

  14. E. S. Ho and J. D. Dow, Phys. Rev. B 27, 1115 (1983).

    ADS  Google Scholar 

  15. S. N. Grinyaev and G. F. Karavaev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 31(5), 545 (1997) [Semiconductors 31, 460 (1997)].

    Google Scholar 

  16. S. N. Grinyaev and V. V. Lopatin, Fiz. Tverd. Tela (St. Petersburg) 38(12), 3576 (1996) [Phys. Solid State 38, 1948 (1996)].

    Google Scholar 

  17. S. N. Grinyaev and V. V. Lopatin, Izv. Vyssh. Uchebn. Zaved., Fiz. 35(2), 27 (1992).

    Google Scholar 

  18. L. Bellaiche, S.-H. Wei, and A. Zunger, Phys. Rev. B 54(24), 17568 (1996).

  19. M. B. Khusidman and V. S. Neshpor, Zh. Éksp. Teor. Khim. 3(2), 270 (1967).

    Google Scholar 

  20. A. W. Moore and L. S. Singer, J. Phys. Chem. Solids 33, 343 (1972).

    Google Scholar 

  21. A. V. Kabyshev, V. M. Kezkalo, V. V. Lopatin, et al., Phys. Status Solidi A 126, K19 (1991).

    Google Scholar 

  22. V. V. Lopatin and F. V. Konusov, J. Phys. Chem. Solids 53(6), 847 (1992).

    Google Scholar 

  23. A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Fiz. Tverd. Tela (St. Petersburg) 37(7), 1981 (1995) [Phys. Solid State 37, 1079 (1995)].

    Google Scholar 

  24. Amorphous Semiconductors, Ed. by M. H. Brodsky (Springer, New York, 1979; Mir, Moscow, 1982).

    Google Scholar 

  25. V. S. Dedkov, Yu. F. Ivanov, V. V. Lopatin, and B. N. Sharupin, Kristallografiya 38(2), 217 (1993) [Crystallogr. Rep. 38, 248 (1993)].

    Google Scholar 

  26. M. J. Puska, J. Phys.: Condens. Matter 1, 7347 (1989).

    ADS  Google Scholar 

  27. O. A. Plaksin, V. A. Stepanov, P. A. Stepanov, et al., J. Nucl. Mater. B 233–237, 1355 (1996).

    Google Scholar 

  28. A. V. Kabyshev and V. V. Lopatin, Poverkhnost, No. 7, 86 (1994).

  29. A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Poverkhnost, No. 8, 34 (1996).

  30. A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Fiz. Khim. Obrab. Mater., No. 6, 21 (1997).

  31. A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Izv. Vyssh. Uchebn. Zaved., Fiz. 43(3), 85 (2000).

    Google Scholar 

  32. A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Poverkhnost, No. 5, 9 (2000).

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Authors and Affiliations

  1. Research Institute of High-Voltage Equipment, Tomsk Polytechnical University, Tomsk, 634050, Russia

    S. N. Grinyaev, F. V. Konusov & V. V. Lopatin

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  1. S. N. Grinyaev
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  2. F. V. Konusov
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  3. V. V. Lopatin
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__________

Translated from Fizika Tverdogo Tela, Vol. 44, No. 2, 2002, pp. 275–282.

Original Russian Text Copyright © 2002 by Grinyaev, Konusov, Lopatin.

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Grinyaev, S.N., Konusov, F.V. & Lopatin, V.V. Deep levels of nitrogen vacancy complexes in graphite-like boron nitride. Phys. Solid State 44, 286–293 (2002). https://doi.org/10.1134/1.1451015

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