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The spread of cross section for electron capture by a trap with a discrete energy level in γ-La2S3 crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

The data on a new phenomenon (a formation of the range of values for an electron-capture cross section) are reported by the example of an electron trap with a discrete level of E c -0.2 eV in γ-La2S3 crystals; the data were obtained by employing the thermally stimulated luminescence. The range of variations in the cross section is as large as four orders of magnitude (10−23–10−19 cm2). A model, according to which the electron trap at E c -0.2 eV is a donor involved in the donor-acceptor pairs distributed in interatomic distances and localized in the vicinity of a negatively charged dislocation, is suggested. It is shown that the formation of a range of electron-capture cross sections is a result of a spread of the cross-section modulation factor at points with different values of potential of the dislocation electric field.

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Authors and Affiliations

  1. Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. 26 Bakinskikh komissarov 94, Makhachkala, 367003, Dagestan, Russia

    E. M. Zobov & M. A. Rizakhanov

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  1. E. M. Zobov
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  2. M. A. Rizakhanov
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 2, 2001, pp. 171–176.

Original Russian Text Copyright © 2001 by Zobov, Rizakhanov.

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Zobov, E.M., Rizakhanov, M.A. The spread of cross section for electron capture by a trap with a discrete energy level in γ-La2S3 crystals. Semiconductors 35, 164–169 (2001). https://doi.org/10.1134/1.1349924

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