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Special features of the growth of hydrogenated amorphous silicon in PECVD reactors

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Abstract

A model has been developed to calculate the growth parameters of silicon films in diode-and triode-type PECVD reactors and to analyze the factors affecting the deposition of silicon-containing radicals. Mechanisms of the effect of diluting silane with molecular hydrogen on the film growth process have been explained.

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Authors and Affiliations

  1. Institute for High-Performance Computing & Data Bases, St. Petersburg, 198005, Russia

    Yu. E. Gorbachev, M. A. Zatevakhin, V. V. Krzhizhanovskaya & V. A. Shveigert

Authors
  1. Yu. E. Gorbachev
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  2. M. A. Zatevakhin
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  3. V. V. Krzhizhanovskaya
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  4. V. A. Shveigert
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__________

Translated from Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 70, No. 8, 2000, pp. 77–86.

Original Russian Text Copyright © 2000 by Gorbachev, Zatevakhin, Krzhizhanovskaya, Shve\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)gert.

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Gorbachev, Y.E., Zatevakhin, M.A., Krzhizhanovskaya, V.V. et al. Special features of the growth of hydrogenated amorphous silicon in PECVD reactors. Tech. Phys. 45, 1032–1041 (2000). https://doi.org/10.1134/1.1307013

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  • DOI: https://doi.org/10.1134/1.1307013

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