Abstract
The results of investigations of the properties of UV photodetectors based on zinc selenide are presented. The influence of the parameters of the diode structure, the temperature, and the voltage on the main characteristics and parameters of the photodetectors is considered.
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Zh. Tekh. Fiz. 68, 123–125 (September 1998)
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Makhnii, V.P. Schottky barrier UV photodetectors based on zinc selenide. Tech. Phys. 43, 1119–1120 (1998). https://doi.org/10.1134/1.1259145
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DOI: https://doi.org/10.1134/1.1259145