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Electronic properties of ZnGeP2 crystals obtained by a solid-phase reaction

  • Electronic and Optical Properties of Semiconductors
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Abstract

The low-temperature synthesis of ZnGeP2 by a solid-phase reaction is carried out for the first time, and photosensitive heterostructures based on it are obtained. The spectral dependences of the photoluminescence of the crystals and the photoconversion quantum efficiency of the heterostructures are investigated. Conclusions regarding the prospects of the new technology for improving the optical quality of ZnGeP2 are drawn.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. A. Vaipolin, Yu. V. Rud’ & T. N. Ushakova

  2. St. Petersburg State Technical University, 195251, St. Petersburg, Russia

    V. Yu. Rud’

Authors
  1. A. A. Vaipolin
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  2. Yu. V. Rud’
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  3. T. N. Ushakova
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  4. V. Yu. Rud’
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Additional information

Fiz. Tekh. Poluprovodn. 33, 1411–1415 (December 1999)

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Vaipolin, A.A., Rud’, Y.V., Ushakova, T.N. et al. Electronic properties of ZnGeP2 crystals obtained by a solid-phase reaction. Semiconductors 33, 1267–1271 (1999). https://doi.org/10.1134/1.1187904

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  • DOI: https://doi.org/10.1134/1.1187904

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