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Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity

  • Amorphous, Glassy, and Porous Semiconductors
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Abstract

Amorphous hydrogenated silicon (a-Si:H) films with photoconductivities as high as 106, i.e., exceeding the photoconductivity of “standard” a-Si:H by two orders of magnitude, are investigated. The dark conductivity (σ d ) of the films has an activation energy ΔE=0.85–1.1 eV. The photoconductivity σ ph is measured at a photocarrier generation rate of 1019 cm−3 · s−1 and photon energy ɛ=2 eV. Several distinctive characteristics are ascertained in the behavior of σ ph and σ d as functions of ΔE and also in the spectral curve and decay kinetics of σ ph during prolonged illumination. It is concluded that the investigated material holds major promise for photovoltaic device applications.

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Authors and Affiliations

  1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    O. A. Golikova & M. M. Kazanin

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  1. O. A. Golikova
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  2. M. M. Kazanin
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Fiz. Tekh. Poluprovodn. 33, 110–113 (January 1999)

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Golikova, O.A., Kazanin, M.M. Amorphous hydrogenated silicon films exhibiting enhanced photosensitivity. Semiconductors 33, 97–100 (1999). https://doi.org/10.1134/1.1187655

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  • DOI: https://doi.org/10.1134/1.1187655

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