Abstract
Nonequilibrium, periodic (in both space and time) temperature distributions in the electron and phonon subsystems of a geometrically bounded semiconductor (thermal waves) are calculated self-consistently with the electron-phonon interaction taken into account. Modulated laser radiation, which is converted into heat on the surface of the sample, serves as the external source of energetic nonequilibrium. The dependence of the amplitude and phase of the electron and phonon temperatures on the modulation frequency is analyzed for different sample thicknesses and a number of characteristic parameters of the problem. It is shown that by varying the modulation frequency over a wide range (up to frequencies of the electron-phonon energy exchange) it is possible to generate thermal waves in the electron and phonon subsystems separately.
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Fiz. Tekh. Poluprovodn. 32, 1325–1330 (November 1998)
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Gurevich, Y.G., González de la Cruz, G., Logvinov, G.N. et al. Effect of electron-phonon energy exchange on thermal wave propagation in semiconductors. Semiconductors 32, 1179–1184 (1998). https://doi.org/10.1134/1.1187587
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DOI: https://doi.org/10.1134/1.1187587