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Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films

  • Electronic and Optical Properties of Semiconductors
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Abstract

Changes have been observed and investigated in the electrooptic properties of ZnS: Mn films used in thin-film electroluminescent structures as a result of irradiation by ultraviolet pulses with energies per pulse much smaller than the threshold energy of laser annealing. It is found that in disordered ZnS: Mn films processes of defect generation are important even for below-threshold energies of the ultraviolet radiation pulses, and can facilitate the effective diffusion and activation of Mn atoms in the ZnS lattice. It is shown that short-time ultraviolet processing of thin-film electroluminescent structures improves their characteristics and, by making the preparation technology simpler and cheaper, allows structures with detector characteristics to be fabricated on low melting-point substrates.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Academy of Sciences of Ukraine, 252028, Kiev, Ukraine

    Ya. F. Kononets, L. I. Veligura & O. A. Ostroukhova

Authors
  1. Ya. F. Kononets
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  2. L. I. Veligura
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  3. O. A. Ostroukhova
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Fiz. Tekh. Poluprovodn. 32, 549–553 (May 1998)

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Kononets, Y.F., Veligura, L.I. & Ostroukhova, O.A. Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films. Semiconductors 32, 491–494 (1998). https://doi.org/10.1134/1.1187425

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  • DOI: https://doi.org/10.1134/1.1187425

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