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Investigation of laser-induced defect formation in CdTe crystals by Rutherford backscattering

  • Semiconductors and Insulators
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Abstract

Rutherford backscattering has been used to study defect formation processes in a CdTe surface layer exposed to pulsed laser radiation. It was established that scattering centers are formed only at laser pulse energies exceeding the melting threshold of the surface. The spatial distributions of Cd and Te and of structural defects in the irradiated layer were determined. The data are interpreted assuming intensive evaporation of one of the components (Cd).

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Authors and Affiliations

  1. M. V. Lomonosov State University, 119899, Moscow, Russia

    L. A. Golovan’, P. K. Kashkarov, Yu. N. Sosnovskikh, V. Yu. Timoshenko & N. G. Chechenin

  2. State Institute of Rare Metals, 109017, Moscow, Russia

    V. M. Lakeenkov

Authors
  1. L. A. Golovan’
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  2. P. K. Kashkarov
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  3. Yu. N. Sosnovskikh
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  4. V. Yu. Timoshenko
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  5. N. G. Chechenin
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  6. V. M. Lakeenkov
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Additional information

Fiz. Tverd. Tela (St. Petersburg) 40, 209–211 (February 1998)

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Golovan’, L.A., Kashkarov, P.K., Sosnovskikh, Y.N. et al. Investigation of laser-induced defect formation in CdTe crystals by Rutherford backscattering. Phys. Solid State 40, 187–189 (1998). https://doi.org/10.1134/1.1130268

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  • DOI: https://doi.org/10.1134/1.1130268

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