EUVL System Patterning Performance
Editor(s): Vivek Bakshi
Author(s): Patrick Naulleau, Gregg Gallatin
Published: 2018
Author Affiliations +
Abstract
The great promise of EUVL comes from its tremendous reduction in wavelength, it being a photon-based technology and thus free of chargedparticle limitations, and it being a projection-based demagnifying system, avoiding the problems of 1X and contact masks. The latter two characteristics make it clear that EUVL is simply an extension of conventional optical projection lithography, allowing us to leverage half a century of learning.
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KEYWORDS
Photomasks

Line edge roughness

Optical lithography

Extreme ultraviolet

Stochastic processes

Extreme ultraviolet lithography

Line width roughness

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