Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

M. Meneghini; C. de Santi; N. Trivellin; K. Orita; S. Takigawa; T. Tanaka; D. Ueda; G. Meneghesso; E. Zanoni

doi:10.1117/12.906551

27 February 2012 Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS

M. Meneghini, C. de Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, E. Zanoni

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 826215 (2012) https://doi.org/10.1117/12.906551
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

Recent studies demonstrated that degradation of InGaN-based laser diodes is due to an increase in non-radiative recombination rate within the active layer of the devices, due to the generation of defects. The aim of this paper is to show - by DLTS - that the degradation of InGaN-based laser diodes is strongly correlated to the increase in the concentration of a deep level located within the active region. The activation energy of the detected deep level is 0.35-0.45 eV. Hypothesis on the nature of this deep level are presented in the paper.

Citation Download Citation

M. Meneghini, C. de Santi, N. Trivellin, K. Orita, S. Takigawa, T. Tanaka, D. Ueda, G. Meneghesso, and E. Zanoni "Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 826215 (27 February 2012); https://doi.org/10.1117/12.906551

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