Fast photorefractive self-focusing in semiconductors

Cristian Dan; Naima Khelfaoui; Delphine Wolfersberger; Nicolas Fressengeas; Hervé Leblond; Mathieu Chauvet

doi:10.1117/12.757925

1 August 2007 Fast photorefractive self-focusing in semiconductors

Cristian Dan, Naima Khelfaoui, Delphine Wolfersberger, Nicolas Fressengeas, Hervé Leblond, Mathieu Chauvet

Proceedings Volume 6785, ROMOPTO 2006: Eighth Conference on Optics; 67851C (2007) https://doi.org/10.1117/12.757925
Event: ROMOPTO 2006: Eighth Conference on Optics, 2006, Sibiu, Romania

Abstract

Photorefractive (PR) spatial soliton propagation hints that all optical routing can be achieved through soliton interactions. This requires, however, fast build up and sensitivity to telecommunication wavelengths. We have investigated the build up of infrared (1,06m) photorefractive solitons in iron doped indium phosphide (InP:Fe) and shown that PR self focusing occurs at input powers of hundreds of W and intensities in the range of W/cm², showing a build up time down to the microsecond.

Citation Download Citation

Cristian Dan, Naima Khelfaoui, Delphine Wolfersberger, Nicolas Fressengeas, Hervé Leblond, and Mathieu Chauvet "Fast photorefractive self-focusing in semiconductors", Proc. SPIE 6785, ROMOPTO 2006: Eighth Conference on Optics, 67851C (1 August 2007); https://doi.org/10.1117/12.757925

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