Compact physical modeling of fully depleted SOI MOSFET

G. I. Zebrev; M. S. Gorbunov

doi:10.1117/12.683547

10 June 2006 Compact physical modeling of fully depleted SOI MOSFET

G. I. Zebrev, M. S. Gorbunov

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601P (2006) https://doi.org/10.1117/12.683547
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

A new compact physical model for fully-depleted SOl MOSFET has been proposed. The key feature of this model is analytical solution of current continuity equation and the introduction and derivation in explicit form of the control parameter having a physical sense the ratio of diffusion component of total drain current to its drift current component. Compact closed-form expressions for drain current, distributions of chemical and electrostatic potential along the channel for all operation modes have been obtained.

Citation Download Citation

G. I. Zebrev and M. S. Gorbunov "Compact physical modeling of fully depleted SOI MOSFET", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601P (10 June 2006); https://doi.org/10.1117/12.683547

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available