Paper
12 October 2005 CMOS compatible vertical directional coupler for 3D optical circuits
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Abstract
We report simulation results for a directional coupler between silicon waveguides in different layers of a three-dimensional (3D) optical circuit. The coupling length is 1.4 mm. The device is manufacturable using standard CMOS technology provided individual waveguide layers can be vertically stacked. In simulations of coupling efficiency the design exhibits negligible loss with respect to translational and rotational misalignments of up to 0.5 μm. Efficiency degradation is less than 5% for etch depth and waveguide width variations of 0.4 μm, and less than 1 dB over the range of standard lithographic tolerances for variations from layer to layer in feature width, depth, and alignment.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. K. Doylend, A. P. Knights, C. Brooks, and P. E. Jessop "CMOS compatible vertical directional coupler for 3D optical circuits", Proc. SPIE 5970, Photonic Applications in Devices and Communication Systems, 59700G (12 October 2005); https://doi.org/10.1117/12.627884
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Waveguides

Silicon

Directional couplers

Semiconducting wafers

Etching

Lithography

Optical circuits

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