Enhanced optical effect in a high electron mobility transistor device

B. B. Pal; H. Mitra

doi:10.1117/12.61285

1 April 1993 Enhanced optical effect in a high electron mobility transistor device

B. B. Pal, H. Mitra

Author Affiliations +

Optical Engineering, Vol. 32, Issue 4, (April 1993). https://doi.org/10.1117/12.61285

Abstract

When radiation is allowed to fall on the spacing between the source and gate and the gate and drain of a AlGaAs/GaAs high electron mobility transfer device, a photovoltage develops across the heterojunction. This significantly enhances the device characteristics.

Citation Download Citation

B. B. Pal and H. Mitra "Enhanced optical effect in a high electron mobility transistor device," Optical Engineering 32(4), (1 April 1993). https://doi.org/10.1117/12.61285

Published: 1 April 1993

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available