Paper
29 August 2002 Adaptive interferometer measurement of the piezoelectric and electro-optic coefficients of PZT films
Vasilii V. Spirin, Francisco J. Mendieta-Jimenez
Author Affiliations +
Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480990
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
In this paper we present simple interferometric technique for thin film testing with GaAs:Cr adaptive photodetectors based on the effect of the non-steady-state photoelectromotive force. The technique needs no special vibroinsulation and automatically adjusts and keeps the operation point of the interferometer. Two different interferometric schemes with GaAs:Cr adaptive photodetectors are reported. A modified Mach-Zehnder interferometer with adaptive photodetector is used for the measurement of piezoelectric coefficient of the thin film. A two-beam polarization interferometer with adaptive photodetector is used for the measurement of effective differential Pockels coefficient re = r33-(n0/ne)3r13. It is shown that two-beam polarization technique allows measurement of the Pockels coefficient of thin film with a strong Fabry-Perot effect that usually presents in ferroelectric thin film. Strong hysteresis effect with a slightly asymmetric form of the hysteresis loop was observed at the dependence of d33 and re coefficients of the PZT thin film versus DC electric field. The values of d33 and re are in agreement with known data.
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Vasilii V. Spirin and Francisco J. Mendieta-Jimenez "Adaptive interferometer measurement of the piezoelectric and electro-optic coefficients of PZT films", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480990
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KEYWORDS
Ferroelectric materials

Interferometers

Thin films

Photodetectors

Electro optics

Interferometry

Mirrors

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