Condensation mechanisms and properties of rf-sputtered a-Si:H

Valerie A. Ligachov; V. A. Filikov; V. N. Gordeev

doi:10.1117/12.47181

1 November 1991 Condensation mechanisms and properties of rf-sputtered a-Si:H

Valerie A. Ligachov, V. A. Filikov, V. N. Gordeev

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47181
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The article is devoted to the influence of the technological parameters on the electrical and optical properties of a-Si:H analysis on the basis of a recently developed approach. It is shown that the region of critical values of deposition parameters T_s and P_h exists. In the vicinity of this region the alteration condensation mechanism of different SiH_m (m equals 0,1,2,3) complexes is observed. The critical values separate the preparation conditions of two different types of a-Si:H material and correspond to non-equilibrium 'phase-transition.' The origin of 'pseudo doping effect' is discussed.

Citation Download Citation

Valerie A. Ligachov, V. A. Filikov, and V. N. Gordeev "Condensation mechanisms and properties of rf-sputtered a-Si:H", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47181

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available