Optimizing the target-to-wafer spacing for highly uniform PVD films

Eric Paton; Ray Pena; Jeff Morioka; Karen Sprock; Jesus Morillo; Kao Sun Tsu

doi:10.1117/12.361327

3 September 1999 Optimizing the target-to-wafer spacing for highly uniform PVD films

Eric Paton, Ray Pena, Jeff Morioka, Karen Sprock, Jesus Morillo, Kao Sun Tsu

Proceedings Volume 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V; (1999) https://doi.org/10.1117/12.361327
Event: Microelectronic Manufacturing '99, 1999, Santa Clara, CA, United States

Abstract

This research examines the optimum spacing between the Physical Vapor Deposition (PVD) target and the wafer substrate, at various stages in the erosion life of the target. As the target erodes, the surface becomes uneven with ring shaped grooves. This effects the radial distribution of material flux onto the wafer, and requires the wafer to be moved further from the target. The optimal target to wafer spacing is plotted against target lifetime for different types of chamber configurations and target materials. Target materials are Ti, TiN, and Al, and chamber configurations are standard Magnetron PVD, Collimated PVD, and Ionized Metal Plasma (IMP) PVD. TiN chambers with Dura TTN magnets show predictable behavior during the life of the target, while Type A magnets and all other chamber configurations show almost now drift in the optimum spacing. Thus, it was decided only Dura TTN (TiN) chambers required spacing compensation. Rate-of- change constants for TiN chambers were input into software provided by Applied Materials, to dynamically adjust the spacing as the target erodes. Thickness uniformity of less than 1% was maintained throughout the target's 1600 KWHrs life.

Citation Download Citation

Eric Paton, Ray Pena, Jeff Morioka, Karen Sprock, Jesus Morillo, and Kao Sun Tsu "Optimizing the target-to-wafer spacing for highly uniform PVD films", Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); https://doi.org/10.1117/12.361327

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