Self-mode-locked semiconductor diode laser

Patrick Langlois; Michel Piche

doi:10.1117/12.326625

8 October 1998 Self-mode-locked semiconductor diode laser

Patrick Langlois, Michel Piche

Proceedings Volume 3415, Laser Diodes and Applications III; (1998) https://doi.org/10.1117/12.326625
Event: Lasers and Materials in Industry and Opto-Contact Workshop, 1998, Quebec, Canada

Abstract

We report on the generation of picosecond pulses from a self-mode-locked semiconductor diode laser. The active medium is an InGaAs amplifier whose gain curve extends from 830 to 870 nm. The facets of the amplifier are cut at angle (5 degrees). The amplifier is inserted in a ring cavity with no other component but mirrors and lenses. Mode locking is entirely passive and it takes place when the laser is operated slightly above threshold and misaligned. Trains of counterpropagating pulses are produced, with pulse durations varying from 2 to 5 ps. The counterpropagating pulses have different spectra, with a wavelength difference up to 7 nm. The pulse repetition rate could be adjusted from 0.8 to 6.4 GHz. We discuss the possibility that some nonlinear mechanisms may give rise to the mode-locking action.

Citation Download Citation

Patrick Langlois and Michel Piche "Self-mode-locked semiconductor diode laser", Proc. SPIE 3415, Laser Diodes and Applications III, (8 October 1998); https://doi.org/10.1117/12.326625

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