III-V compounds and piezoelectric ceramic thin films deposited by reactive PLD: application to sensor building

Maria Dinescu; P. Verardi; F. Craciun; Catrinel A. Stanciu; Raluca Dinu; C. Gerardi; L. Mirenghi; Mariuca Gartner; Viorel Sandu

doi:10.1117/12.312738

2 July 1998 III-V compounds and piezoelectric ceramic thin films deposited by reactive PLD: application to sensor building

Maria Dinescu, P. Verardi, F. Craciun, Catrinel A. Stanciu, Raluca Dinu, C. Gerardi, L. Mirenghi, Mariuca Gartner, Viorel Sandu

Author Affiliations +

Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312738
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania

Abstract

High quality AlN, GaN, ZnO and PZT thin films were deposited on different substrates by laser ablation of metallic or PZT targets in nitrogen or oxygen reactive atmosphere. A YAG laser ((lambda) equals 1.06 micrometers , t_FWHM equals 10 ns, 0.3 J/pulse) was used as laser source. The target collector distance was varied in the range 3 - 8 cm, the gas pressure in the range 10^-3 - 10^-1 mbar, the collectors were heated at temperatures between 200 and 400 degree(s)C. The influence of the process parameters on the physical properties of the deposited films was analyzed. The profile of atoms inside the film was evidenced by SIMS analysis. Depth profile XPS and AES confirm the presence of Al-N, Ga-N and Zn-O bonds inside the films. X-ray diffraction studies revealed different crystalline orientation depending on deposition conditions. The recorded spectra show the crystalline orientation of the layers, at collector's temperatures lower than the best results reported in literature. Optical absorption spectroscopy studies in the UV and visible range evidenced a high transparency (over 80% transmission) for the AlN, GaN and ZnO deposited films. For PZT a particular result consists in the piezoelectricity of the deposited films `as received', without any subsequent thermal or electric treatment.

Citation Download Citation

Maria Dinescu, P. Verardi, F. Craciun, Catrinel A. Stanciu, Raluca Dinu, C. Gerardi, L. Mirenghi, Mariuca Gartner, and Viorel Sandu "III-V compounds and piezoelectric ceramic thin films deposited by reactive PLD: application to sensor building", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312738

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Ferroelectric materials

Thin films

Gallium nitride

Zinc oxide

Crystals

Oxygen

Thin film deposition

Show All Keywords

Keywords/Phrases

Search In:

Publication Years