Gas source molecular beam growth of multiple quantum well modulators, detectors, and avalanche photodiodes at 1.55 um

John E. Cunningham; William Jan; Keith W. Goossen; Joseph Earl Ford; R. N. Pathak; G. Zhang

doi:10.1117/12.298237

22 December 1997 Gas source molecular beam growth of multiple quantum well modulators, detectors, and avalanche photodiodes at 1.55 μm

John E. Cunningham, William Jan, Keith W. Goossen, Joseph Earl Ford, R. N. Pathak, G. Zhang

Author Affiliations +

Proceedings Volume 3290, Optoelectronic Integrated Circuits II; (1997) https://doi.org/10.1117/12.298237
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We demonstrate the performance of InGaAs/InP multiple quantum well modulators for fiber access applications. On/off contrast ratios in reflectivity are 22:1 with a 10:1 level extending over a 26 nm bandwidth at 1.55 micrometers. Arrays of high quality pin InGaAs with low dark and zero bias operation are realized and further applied to avalanche photodiodes.

Citation Download Citation

John E. Cunningham, William Jan, Keith W. Goossen, Joseph Earl Ford, R. N. Pathak, and G. Zhang "Gas source molecular beam growth of multiple quantum well modulators, detectors, and avalanche photodiodes at 1.55 μm", Proc. SPIE 3290, Optoelectronic Integrated Circuits II, (22 December 1997); https://doi.org/10.1117/12.298237

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