Paper
23 September 1996 Micromachine scanning tunneling microscope for nanoscale characterization and fabrication
Yasuo Wada, M. Lutwyche, M. Ishibashi
Author Affiliations +
Proceedings Volume 2879, Micromachining and Microfabrication Process Technology II; (1996) https://doi.org/10.1117/12.251231
Event: Micromachining and Microfabrication '96, 1996, Austin, TX, United States
Abstract
Silicon ultra-large-scale integrated circuit (ULSI) technology has experienced an extremely rapid progress for more than 25 years, however, several physical, chemical and technological limitations are foreseen against further scaling beyond the 0.1 micrometers technology level. This paper describes the several key issues towards the possible advancement of nanoscale ULSIs by nanotechnology, especially scanning tunneling microscope (STM). The key factor is the speed or throughput when STM is applied to the fabrication and characterization of ULSIs. Therefore, parallel operation should be indispensable to accomplish the appropriate throughput, which would only be achieved by micromachine STM. Possible application of micromachine STM to characterization and fabrication is described, such as advanced lithography system below 0.1 micrometers technology level.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuo Wada, M. Lutwyche, and M. Ishibashi "Micromachine scanning tunneling microscope for nanoscale characterization and fabrication", Proc. SPIE 2879, Micromachining and Microfabrication Process Technology II, (23 September 1996); https://doi.org/10.1117/12.251231
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Cited by 4 scholarly publications.
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KEYWORDS
Scanning tunneling microscopy

Lithography

Nanolithography

Silicon

Scanning probe microscopy

Transmission electron microscopy

Actuators

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