Threshold current and carrier lifetime in MOVPE regrown 1.5 um GaInAsP buried ridge structure lasers

M. Tischel; M. Rosenzweig; Axel Hoffmann; Herbert Venghaus; F. Fidorra

doi:10.1117/12.24316

1 March 1991 Threshold current and carrier lifetime in MOVPE regrown 1.5 um GaInAsP buried ridge structure lasers

M. Tischel, M. Rosenzweig, Axel Hoffmann, Herbert Venghaus, F. Fidorra

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24316
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Buried Ridge Structure GaInAsP/InP lasers with stripes parallel to and directions are fabricated by metal-orgnic vapour phase epitaxy regrowth and effective carrier lifetimes Teff of these devices are determined from the variation of the turn-on delay of the emitted radiation when short current pulses are applied to the lasers for different bias currents. We obtained Teff 2 ns for stripes parallel to the direction and eff lfl the range from 0. 5 ns to 0. 7 ns for stripes parallel to the direction. Our results demonstrate that the earlier observed large threshold currents of lasers with stripes parallel to the direction are essentially due to reduced carrier lifetimes and to a minor extent due to additional leakage currents. The reduced effective carrier lifetimes are attributed to Zn which has diffused from the GaInAs-contact layer into the active layer in accordance with recent secondary ion mass spectroscopic investigations. The reduced carrier lifetime leads to an increase of the 3 dB cut-off frequency of directly modulated lasers beyond 6 GHz. SPIE Vol 1361 Physical Concepts of Materials for Novel Optoelectronic Device Applications 1(1990) / 917

Citation Download Citation

M. Tischel, M. Rosenzweig, Axel Hoffmann, Herbert Venghaus, and F. Fidorra "Threshold current and carrier lifetime in MOVPE regrown 1.5 um GaInAsP buried ridge structure lasers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24316

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available