Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy

Julius Joseph Santillan; Toshiro Itani

doi:10.1117/12.2294585

13 March 2018 Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy

Proceedings Volume 10586, Advances in Patterning Materials and Processes XXXV; 105860F (2018) https://doi.org/10.1117/12.2294585
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

An in situ resist dissolution analysis of a ZrOx-based metal resist in a typical organic solvent developer [e.g., normal butyl acetate (nBA)] revealed three types of dissolution behaviors: “nano-swelling” at the film surface, “nonuniform dissolution” in the mid-film region, and “resist residue” at the bottom. Attributed to the presence of metal resist film depth inhomogeneities, these dissolution behaviors can impact the EUVL imaging performance of the metal resists. Based on the results obtained, it was also found that developer polarity plays a significant role in obtaining a more uniform or stable dissolution characteristic for metal resists.

Citation Download Citation

Julius Joseph Santillan and Toshiro Itani "Investigations on EUVL metal resist dissolution behavior using in situ high-speed atomic force microscopy", Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860F (13 March 2018); https://doi.org/10.1117/12.2294585

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