Roadmap evolution: from NTRS to ITRS, from ITRS 2.0 to IRDS

Paolo A. Gargini

doi:10.1117/12.2280803

16 October 2017 Roadmap evolution: from NTRS to ITRS, from ITRS 2.0 to IRDS

Paolo A. Gargini

Proceedings Volume 10450, International Conference on Extreme Ultraviolet Lithography 2017; 1045018 (2017) https://doi.org/10.1117/12.2280803
Event: SPIE Photomask Technology and EUV Lithography, 2017, Monterey, California, United States

Abstract

The semiconductor industry benefitted from roadmap guidance since the mid-60s. The roadmap anticipated and outlined the main needs of the semiconductor industry for years to come and identified future challenges and possible solutions. Making transistor smaller by means of advanced lithographic technologies enabled both increased integration levels and improved IC performance. The roadmap methodology allowed the removal of multiple “red brick walls”. The NTRS and the ITRS constituted primarily a “bottom up” approach as standard microprocessors and memories where introduced at a blistering pace barely allowing time for system houses to integrate them in their products. The 1998 ITRS provided the vision that triggered research, development and manufacturing communities to develop a completely new transistor structure in addition to replacing aluminum interconnects with a more advanced technology. The advent of Foundries and Fabless companies transformed the electronics industry into a “top down” driven industry in the past 15 years. The ITRS adjusted to this new ecosystem and morphed into the International Roadmap for Devices and Systems (IRDS) sponsored by IEEE. The IRDS is addressing the requirements and needs of the renewed electronics industry. Furthermore, by the middle of the next decade the ability to layout integrated circuits in a 2D geometry grid will reach fundamental physical limits and the aggressive conversion to 3D architecture for integrated circuit must be pursued across the board as an avenue to continuously increasing transistor count and improving performance. EUV technology is finally approaching the manufacturing stage but with the advent of 3D monolithically integrated heterogeneous circuits approaching in the not-toodistant future should the semiconductor industry concentrate its resources on the next lithographic technology generation in order to enhance resolution or on providing a smooth transition to the new revolutionary 3D architecture of integrated circuits? It is essential for the whole semiconductor industry to come together and make fundamental choices leading to a cooperative and synchronized allocation of adequate resources to produce viable solutions that once introduced in a timely manner into manufacturing will enable the continuation of the growth of the electronic industry at a pace comparable or exceeding historical trends.

Conference Presentation

Citation Download Citation

Paolo A. Gargini "Roadmap evolution: from NTRS to ITRS, from ITRS 2.0 to IRDS", Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045018 (16 October 2017); https://doi.org/10.1117/12.2280803

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