TD formation in CZ-silicon annealed at 450 degrees C in air ambient

Shyam Singh; Om Prakash

doi:10.1117/12.221190

18 September 1995 TD formation in CZ-silicon annealed at 450 degrees C in air ambient

Shyam Singh, Om Prakash

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221190
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Exact kinetics of donor formation and possible number of oxygen atoms in a single TD are two aspects out of many problems related with oxygen related donors in CZ-silicon, which carry a mark of interrogation. Boron doped p-type silicon wafers were annealed in air ambient at 450 degrees C for different durations and subjected to resistivity and FTIR studies. It was observed that ambients do not affect the process of TD generation. Successive increase in annealing times results in the exponential growth of donors with a maximum of approximately 1.79 X 10¹⁷ cm^-3 obtained in our samples annealed for 55 hours only. Annealing also caused a gradual decrease in absorption coefficient. Maximum observed value of oxygen and carbon precipitations was 2.362 ppma and 1.100 ppma respectively. The diffusion coefficient for oxygen was found to be approximately 4.17 X 10^-19 cm^-9S^-1. The oxygen and carbon reduction followed the second order kinetics. The activiation energy was approximately 0.823 eV and the number of oxygen atoms in a single TD may be 7.

Citation Download Citation

Shyam Singh and Om Prakash "TD formation in CZ-silicon annealed at 450 degrees C in air ambient", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221190

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