The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO2

Melkamu A. Belete

doi:10.1117/12.2020003

29 March 2013 The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO₂

Melkamu A. Belete

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850W (2013) https://doi.org/10.1117/12.2020003
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Electronics advancement demands integration of large number of transistors /capacitors in a very small chip area. Thus, small feature size fabrication is a critical issue and precise fabrications of features under nano scale require advanced lithographic and etching techniques. In this paper, MOS capacitor with TiN metal-gate and HfO₂ dielectric layer was fabricated in a world class clean-room lab in KTH. There, state-of-the art lithography stepper, advanced etching machines and all important clean-room fabrication facilities were used for successful fabrication of the nano-dimension MOS capacitor, whose detailed experimental procedures and results are exhaustively dealt in this report.

Citation Download Citation

Melkamu A. Belete "The importance of lithography and advanced etch techniques for nanofabrication of MOS capacitor with HfO₂", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850W (29 March 2013); https://doi.org/10.1117/12.2020003

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KEYWORDS

Capacitors

Etching

Molybdenum

Oxides

Tin

Lithography

Dielectrics

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