Paper
6 May 2013 Buffer direct injection readout integrated circuit design for dual band infrared focal plane array detector
Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Shiang-Feng Tang, Wen-Jen Lin
Author Affiliations +
Abstract
This paper proposes dual-mode buffer direct injection (BDI) and direct injection (DI) readout circuit design. The DI readout circuit has the advantage of being a simple circuit, requiring a small layout area, and low power consumption. The internal resistance of the photodetector will affect the photocurrent injection efficiency. We used a buffer amplifier to design the BDI readout circuit since it would reduce the input impedance and raise the injection efficiency. This paper will discuss and analyze the power consumption, injection efficiency, layout area, and circuit noise. The circuit is simulated using a TSMC 0.35 um Mixed Signal 2P4M CMOS 5 V process. The dimension of the pixel area is 30×30 μm. We have designed a 10×8 array for the readout circuit of the interlaced columns. The input current ranges from 1 nA to 10 nA, when the measurement current is 10 pA to 10 nA. The integration time was varied. The circuit output swing was 2 V. The total root mean square noise voltage was 4.84 mV. The signal to noise ratio was 52 dB, and the full chip circuit power consumption was 9.94 mW.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tai-Ping Sun, Yi-Chuan Lu, Hsiu-Li Shieh, Shiang-Feng Tang, and Wen-Jen Lin "Buffer direct injection readout integrated circuit design for dual band infrared focal plane array detector", Proc. SPIE 8773, Photon Counting Applications IV; and Quantum Optics and Quantum Information Transfer and Processing, 877306 (6 May 2013); https://doi.org/10.1117/12.2017730
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KEYWORDS
Sensors

Infrared sensors

Amplifiers

Switches

Readout integrated circuits

Infrared radiation

Resistance

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