Highly accurate calibration method of electron-beam cell projection lithography

Yoshinori Nakayama; Yasunari Sohda; Norio Saitou; Hiroyuki Itoh

doi:10.1117/12.146503

24 June 1993 Highly accurate calibration method of electron-beam cell projection lithography

Yoshinori Nakayama, Yasunari Sohda, Norio Saitou, Hiroyuki Itoh

Proceedings Volume 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III; (1993) https://doi.org/10.1117/12.146503
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A novel calibration method of electron-optics in cell projection method was proposed. The electron-optics of the cell projection method requires more severe reduction ratio and rotation adjustments than the conventional variable-shaped method. This method uses a calibration aperture pattern fabricated in the same silicon shaping mask. The reduction ratio and the rotation of the cell mask have been calibrated within 1% and within several m-rad, respectively. Such a silicon shaping mask was fabricated by new processes using SOI wafer. In the delineation experiment, an ULSI pattern corresponding to 256-Mbit DRAM gate pattern having 0.2 micrometers minimum feature size was exposed. The stitching error of each shot was smaller than 0.02 micrometers .

Citation Download Citation

Yoshinori Nakayama, Yasunari Sohda, Norio Saitou, and Hiroyuki Itoh "Highly accurate calibration method of electron-beam cell projection lithography", Proc. SPIE 1924, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III, (24 June 1993); https://doi.org/10.1117/12.146503

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