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28 January 1993 Atomic structure and properties of defects and interfaces in semiconductor heterostructures
J. Narayan
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Proceedings Volume 10267, Integrated Optics and Optoelectronics: A Critical Review; 1026709 (1993) https://doi.org/10.1117/12.141418
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
Atomic structure of defects and interfaces in semiconductor heterostructures determine properties and operation of device structures of these materials. In order to minimize their adverse effects, we need to understand the atomic structure of these defects and correlations with physical properties and device operation. A three-step iterative procedure has been developed to determine atomic structure of dislocations, twins, stacking faults and grain boundaries. These steps consist of : (a) calculation of atomic structure of defects using appropriate interatomic potentials, (b) simulation of high-resolution TEM images, and (c) comparison with experimental images. By manipulating atomic structure of defects, electrically active defects can be converted into inactive defects, thus reducing their effectiveness as trap or recombination centers. We also discuss various methods which can be employed to reduce the number density or preferably eliminate the process-induced defects.
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J. Narayan "Atomic structure and properties of defects and interfaces in semiconductor heterostructures", Proc. SPIE 10267, Integrated Optics and Optoelectronics: A Critical Review, 1026709 (28 January 1993); https://doi.org/10.1117/12.141418
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KEYWORDS
Heterojunctions
Interfaces
Semiconductors
Transmission electron microscopy
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