Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition

Rachel A. Nye; Kaat Van Dongen; Hironori Oka; Danilo De Simone; Gregory N. Parsons; Annelies Delabie

doi:10.1117/1.JMM.21.4.041407

4 November 2022 Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition

Rachel A. Nye, Kaat Van Dongen, Hironori Oka, Danilo De Simone, Gregory N. Parsons, Annelies Delabie

Author Affiliations +

Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 21, Issue 4, 041407 (November 2022). https://doi.org/10.1117/1.JMM.21.4.041407

Abstract

Background

Extreme ultraviolet (EUV) lithography is crucial to achieving smaller device sizes for next-generation technology, although organic resists face substantial challenges, such as low etch resistance, which limit the resolution of smaller features.

Aim

Evaluate the potential for area-selective deposition (ASD) to improve EUV pattern resolution (e.g., by increasing etch resistance).

Approach

We evaluate thermal compatibility, atomic layer deposition growth rate, and selectivity for TiO₂ ASD on various organic EUV resist materials using water contact angle, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. The effects of photo-acid generator (PAG) and EUV exposure on polymer properties and selectivity are considered.

Results

The organic resist materials studied demonstrate thermal compatibility with TiO₂ ALD (125°C for 60 min). The TiO₂ ALD process from TiCl₄ and H₂O proceeds readily on poly(tert-butyl methacrylate), poly(p-hydroxystyrene), and poly(p-hydroxystyrene-random-methacrylic acid) polymers, with and without PAG incorporation, in either the as-formed or EUV exposed state. However, TiO₂ is inhibited on poly(cyclohexyl methacrylate).

Conclusions

We demonstrate that as-formed EUV resists can serve as either the growth or nongrowth surface during TiO₂ ASD, thereby enabling resist hardening and tone inversion applications, respectively. These results serve as a basis for further ASD studies on EUV resist materials to improve pattern resolution in next-generation devices.

Citation Download Citation

Rachel A. Nye, Kaat Van Dongen, Hironori Oka, Danilo De Simone, Gregory N. Parsons, and Annelies Delabie "Compatibility between polymethacrylate-based extreme ultraviolet resists and TiO2 area-selective deposition," Journal of Micro/Nanopatterning, Materials, and Metrology 21(4), 041407 (4 November 2022). https://doi.org/10.1117/1.JMM.21.4.041407

Received: 9 May 2022; Accepted: 11 October 2022; Published: 4 November 2022

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