Numerical simulation of semiconductor optical amplifier assisted Sagnac gate and investigation of its switching characteristics

Thanassis Houbavlis; Kyriakos E. Zoiros

doi:10.1117/1.1751132

1 July 2004 Numerical simulation of semiconductor optical amplifier assisted Sagnac gate and investigation of its switching characteristics

Thanassis Houbavlis, Kyriakos E. Zoiros

Author Affiliations +

Optical Engineering, Vol. 43, Issue 7, (July 2004). https://doi.org/10.1117/1.1751132

Abstract

The switching characteristics of a semiconductor optical amplifier (SOA)-assisted Sagnac gate are analyzed in terms of their critical performance parameters for full duty cycle operation from 10 to 40 GHz. Within this frame, the influence of the control pulse width, as well as of the SOA gain recovery time on the switching energy and the contrast ratio, is examined through numerical simulation. The obtained results show that full switching operation at 40 GHz or higher is feasible either by deploying gain recovery reduction techniques in bulk SOAs, or other alternative technologically advanced optical devices, such as quantum-dot SOAs.

©(2004) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Thanassis Houbavlis and Kyriakos E. Zoiros "Numerical simulation of semiconductor optical amplifier assisted Sagnac gate and investigation of its switching characteristics," Optical Engineering 43(7), (1 July 2004). https://doi.org/10.1117/1.1751132

Published: 1 July 2004

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