Paper
26 April 2007 Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel'kov, A. A. Babenko, D. G. Ikusov, R. N. Smirnov, V. S. Varavin
Author Affiliations +
Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 66360U (2007) https://doi.org/10.1117/12.742528
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation
Abstract
We report the experimental observation of superluminescence in the wavelength range 1 .4 - 4.5 μm from epitaxial structures Cdx4Hg1-xTe under pulsed optical pumping by Nd:YAG laser. The samples CdxHg1-xTe were grown on GaAs and Si substrates by the Molecular Beam Epitaxy. The stimulated emission has been observed from the structures at temperatures 77 - 200 K. Details of the samples, observation scheme, the super luminescence spectra are discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. A. Andronov, Yu. N. Nozdrin, A. V. Okomel'kov, A. A. Babenko, D. G. Ikusov, R. N. Smirnov, and V. S. Varavin "Superluminescence from optically pumped CdxHg1-xTe heterostructures on GaAs and Si substrates", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 66360U (26 April 2007); https://doi.org/10.1117/12.742528
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Cited by 6 scholarly publications.
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KEYWORDS
Silicon

Gallium arsenide

Optical pumping

Heterojunctions

Cadmium

Annealing

Mercury

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