Paper
9 March 2001 Internal Q-switching in single-heterostructure lasers: one term for two phenomena
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Abstract
Great differences were found between the spectral and power responses for two modes of a single-heterostructure laser operation, with the dynamic behavior of each mode fitted to the traditional definition of the internal Q-switching phenomenon. The first mode is interpreted in terms of the most popular diffraction losses theory, while the other one is related to the practically important method of high-power picosecond optical pulse generation and interpreted in terms of a recent carrier heating and cooling model. This finding could obviate confusion in the interpretation of mechanisms of high-power picosecond pulse generation in the Q-switching mode.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey N. Vainshtein and Juha Tapio Kostamovaara "Internal Q-switching in single-heterostructure lasers: one term for two phenomena", Proc. SPIE 4354, Laser Optics 2000: Semiconductor Lasers and Optical Communication, (9 March 2001); https://doi.org/10.1117/12.418830
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Cited by 3 scholarly publications.
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KEYWORDS
Q switches

Semiconductor lasers

Picosecond phenomena

Diffraction

Pulsed laser operation

Absorption

Diodes

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