Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays

Lester J. Kozlowski; Kadri Vural; Jose M. Arias; William E. Tennant; Roger E. DeWames

doi:10.1117/12.280406

26 August 1997 Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays

Lester J. Kozlowski, Kadri Vural, Jose M. Arias, William E. Tennant, Roger E. DeWames

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280406
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

The ability to hybridize various detector arrays in disparate technologies to an assortment of state-of-the-art silicon readouts has enabled direct comparison of key IR detector technologies including photovoltaic (PV) HgCdTe/Al₂O₃, PV HgCdTe/CdZnTe, PV InGaAs/InP, and the photoconductive (PC) GaAs/AlGaAs quantum well IR photodetector (QWIP). The staring focal plane arrays range in size from 64 X 64 to 1024 X 1024; we compare these IR detector technologies versus operating temperature and background flux via hybrid FPA test at operating temperatures from 32.5 K to room temperature and photon backgrounds from mid-10⁵ to approximately equals 10¹⁷ photons/cm²-s. Several state-of-the-art IR FPAs are included: a 1.7 micrometers 128 X 128 InGaAs hybrid FPA with room temperature D of 1.5 X 10¹³ cm-Hz^1/2/W and 195K D of 1.1 X 10¹⁵ cm-Hz^1/2/W; a 3.2 micrometers 1024 X 1024 FPA for surveillance; a 4.6 micrometers 256 X 256 HgCdTe/Al₂O₃ FPA for imaging with BLIP NE(Delta) T of 2.8 mK at 95K; and a 9 micrometers 128 X 128 GaAs QWIP with 32.5 K D > 10¹⁴ cm-Hz^1/2/W at 32.5K and 8 X 10¹⁰ cm-Hz^1/2W at 62K.

Citation Download Citation

Lester J. Kozlowski, Kadri Vural, Jose M. Arias, William E. Tennant, and Roger E. DeWames "Performance of HgCdTe, InGaAs and quantum well GaAs/AlGaAs staring infrared focal plane arrays", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280406

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