Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers

S. Preu; S. Regensburger; S. Kim; M. Mittendorff; S. Winnerl; S. Malzer; H. Lu; P. G. Burke; A. C. Gossard; H. B. Weber; M. S. Sherwin

doi:10.1117/12.2029478

18 October 2013 Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers

S. Preu, S. Regensburger, S. Kim, M. Mittendorff, S. Winnerl, S. Malzer, H. Lu, P. G. Burke, A. C. Gossard, H. B. Weber, M. S. Sherwin

Author Affiliations +

Proceedings Volume 8900, Millimetre Wave and Terahertz Sensors and Technology VI; 89000R (2013) https://doi.org/10.1117/12.2029478
Event: SPIE Security + Defence, 2013, Dresden, Germany

Abstract

We report on Terahertz (THz) detectors based on III-V high-electron-mobility field-effect transistors (FET). The detection results from a rectification process that is still highly efficient far above frequencies where the transistor provides gain. Several detector layouts have been optimized for specific applications at room temperature: we show a broadband detector layout, where the rectifying FET is coupled to a broadband logarithmic-periodic antenna. Another layout is optimized for mixing of two orthogonal THz beams at 370 GHz or, alternatively, 570 GHz. A third version uses a large array of FETs with very low access resistance allowing for detection of very short high-power THz pulses. We reached a time resolution of 20 ps.

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S. Preu, S. Regensburger, S. Kim, M. Mittendorff, S. Winnerl, S. Malzer, H. Lu, P. G. Burke, A. C. Gossard, H. B. Weber, and M. S. Sherwin "Broadband THz detection and homodyne mixing using GaAs high-electron-mobility transistor rectifiers", Proc. SPIE 8900, Millimetre Wave and Terahertz Sensors and Technology VI, 89000R (18 October 2013); https://doi.org/10.1117/12.2029478

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