Recent developments in MOCVD of Hg1-xCdxTe

Stuart J. C. Irvine

doi:10.1117/12.138643

10 December 1992 Recent developments in MOCVD of Hg_1-xCd_xTe

Stuart J. C. Irvine

Proceedings Volume 1735, Infrared Detectors: State of the Art; (1992) https://doi.org/10.1117/12.138643
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

Recent developments in metal-organic chemical vapor deposition (MOCVD) growth of the infrared detector material Hg_1-xCd_xTe can be subdivided into three main areas: reaction kinetics, in situ monitoring of growth and doping. The growth regime for most laboratories is kinetic/catalytic, and a good understanding of these growth mechanisms is essential for adequate control of growth rate and composition. In situ monitoring using laser reflectance can measure growth rate and composition and can be sensitive to morphology throughout a multilayer structure. This new information on the kinetic processes is a powerful diagnostic tool for the crystal grower. Doping the epitaxial layers with low volatility organometallics, or in the case of As using the diluted hydride, has been demonstrated by a number of laboratories, but problems with memory doping from indium and incorporation/activation efficiencies for arsenic will be resolved by understanding the surface chemistry. Arsenic implanted double layer heterostructure diode results show comparable 80 K R_OA values to LPE p/n diodes.

Citation Download Citation

Stuart J. C. Irvine "Recent developments in MOCVD of Hg_1-xCd_xTe", Proc. SPIE 1735, Infrared Detectors: State of the Art, (10 December 1992); https://doi.org/10.1117/12.138643

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