High-Mobility CVD-Grown Ge/Strained Ge<sub>0.9</sub>Sn<sub>0.1</sub>/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness | IEEE Journals & Magazine | IEEE Xplore