High Hole-Mobility Strained-<formula formulatype="inline"><tex Notation="TeX">$\hbox{Ge/Si}_{0.6} \hbox{Ge}_{0.4}$</tex></formula> P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness

High Hole-Mobility Strained-- P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness | IEEE Journals & Magazine | IEEE Xplore