Acetonyltriphenylphosphonium 2,3,5-triphenyltetrazolium tetrachloridocuprate(II)

The product of the reaction of CuCl2·2H2O with both one equivalent of acetonyl triphenylphosphonium chloride and one equivalent of 2,3,5-triphenyltetrazolium chloride is described. The dianion, [CuCl4]2−, adopts a distorted tetrahedral geometry.


Figure 1
The molecular components of the title compound. Displacement ellipsoids are drawn at the 50% probability level.

Figure 2
A view of the packing of the title compound viewed along [100], with hydrogen-bonding interactions shown as dashed lines. Displacement ellipsoids are drawn at the 50% probability level. The acetonyltriphenylphosphonium cations form supramolecular dimers through pairs of centrosymmetric C-HÁ Á ÁO interactions.
only nine structures of acetonyl triphenylphosphonium and seventeen structures of 2,3,5-triphenyltetrazolium have been deposited in the CSD. No structure including both acetonyltriphenylphosphonium and 2,3,5-triphenyltetrazolium species was found.

Synthesis and crystallization
All chemicals were purchased from Aldrich Company, Germany and used as received. Acetonyl triphenylphosphonium chloride and 2,3,5-triphenyl tetrazolium chloride were mixed in acetonitrile with CuCl 2 Á2H 2 O in a 1:1:1 ratio: a yellow-orange solution was obtained. Orange crystals suitable for a single-crystal X-ray diffraction study were obtained after a slow solvent evaporation at room temperature (300 K).

Acetonyltriphenylphosphonium 2,3,5-triphenyltetrazolium tetrachloridocuprate(II)
Crystal data where P = (F o 2 + 2F c 2 )/3 (Δ/σ) max = 0.003 Δρ max = 0.59 e Å −3 Δρ min = −0.31 e Å −3 Special details Geometry. All esds (except the esd in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell esds are taken into account individually in the estimation of esds in distances, angles and torsion angles; correlations between esds in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell esds is used for estimating esds involving l.s. planes.